Is there any other method to measure piezoelectric coefficient besides using Piezo response force microscopy ( PFM) for thin film piezoelectric MEMS such as AIN?
There is a simple equipment available to measure the piezoelectric properties of thin films by name 'd33 meter'. Below attached is one of the common links wherein you can see information about d33 meter.
As suggested by Jose Joseph, d33 meter can be used for the piezoelectric measurements but the problem is it can be used only for the bulk samples. In my opinion apart from PFM, do the strain-electric field measurement for your thin film. Slope of S-E graph give you the piezoelectric charge coefficient. d=S/E
Since AIN is nonferroelectric materials (where NO polarization are needed using both electrode before measurement) do it still need both top and bottom electrodes for d33 measurement using d33 meter?
I just found another method that is using capacitive method as reported below.
I'd advise against this capacitive method. I've recently tested it and similarly to what is reported in the referenced paper my results greatly overestimated the d33 constant.
While it should be possible to retrieve the d33 value in theory using this method (I've compared with a Comsol model just to make sure), it seems like other physics beside the piezoelectric effect could be the cause of the change in capacitance observed.
Thank you for the answer about the capacitive method Andre Dompierre
How about the dynamic resonant method by measuring the resonant and antiresonant frequencies which give the minimum and maximum impedance of the piezoelectric thin film as reported by Mason and Jeff in paper below.
Methods for Measuring Piezoelectric, Elastic and Dielectric Coefficients of Crystals and Ceramics; W.P. Mason, H. Jaffe., (IEE Standard 178-1958). Proceedings of the IRE, 42, 1954, pp921-930.
This paper also compares various method including the resonant method.