I am preparing to start working on thin film transistor (TFT) devices from metal oxides. In literature I have seen most people use semiconductor parameter analyzers for measuring drain current as a function of drain voltage and gate voltage. We do not have this apparatus in our lab, but we have Autolab PGSTAT30/2 setup that we use for solar cell IV and Impedance/admittance spectroscopy measurements.
I was wondering if it is possible to use this Autolab to characterize TFT devices.