I measured C-V by changing the frequency from 10kHz to 1MHz. Typically, jigger frequencies have lower capacitance compared to 10kHz at the accumulation regime of Al/HfO2/p-Si MIS-diode. In this time, 1MHz frequency shown higher accumulation capacitance around 1uF/cm2 compared to 10kHz. What is the mechanism of this reverse C-V characteristics dependence on the frequency?