Pinning level is the extreme Fermi level of a semi-conductor can reach when heavily doped (maximum energy for n-doping or minimum energy for p-doping) from a certain concentration of dopant. When it is reached and above this concentration of dopant, charges from the dopant are neutralized by generated charges from the material itself (Si will emit electrons to pairs with holes from some Boron atoms).
So maybe further Boron atoms insertion in Silicon become pointless from one point (unless I saw sometimes H or Al or also used with B, maybe to help to further p-dope/decrease Fermi level below pinning level ?).
Is this p-type pinning Fermi level of Si easy too achieve with current Boron doping process methods?
Or if not, are we far to reach it and we must further find ways to insert more Boron atoms?
I don't find any appropriate publication to answer this problem.
Thank you for helping.
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