I have read some papers which reported some researchers could deposit some semiconductors like Bi2Te3 or Sb2Te3 and etc. on SiO2 substrate, also it is mentioned in other works that the surface of substrate (crystal structure) is not important for non-lateral 2D materials. But when we try to deposit some semiconductors like GaSb or GaAs, we could get nothing on the SiO2 substrate!
most of works that utilized MBE method could deposit layered 2D GaSb on the SiO2 but by CVD there is nothing?!
i was wondering if any one can help me and a little explain the surface parameters like effect of surface energy or structures on CVD 2D materials growth or at least mention some references.
Best regards.
Intrinsic and extrinsic stress contributions (arising from the deposited film, and the substrate) tend to influence significantly the rowth of a certain thin film material on agiven substrate.
Firstly, Thermal mismatch can be the most crucial. In case you are growing the films at a substrate temperature suitable for the thin film compound formation by any technique (sputtering, CVD etc.,) then it is always good to know the substrate characteristics (variation of tce with temperature) of the substrate).
Secondly the growth parameters can generate a lot of stress in the film. If the stress level are high in the deposited film, then simply the films will either peel away, or crumble.
K. Sreenivas
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