I need to etch the film to get microstructures. The idea was simply of using magnetron. When the film is placed on the target it is etched by Ar flux. But it does not etch comletely. 2-3 nm always remain. I suppose it is due to surface charging of the substrate. The sample receives positive charge and shields itself from the Ar flux. How can I etch all the film? Probably I should use RF power supply? Or I need to neutralize charge by electron flux from the filament after etching? Have anybody faced with such question?
what kind of film are you etching and how do you determine the thickness of the remaining layer?
I don't think that this is due to substrate charging because the chargin is there from the beginning on and shouldn't change much if you have a single layer. There might be some changes if you have a systems of more than one layer but I cannot give a final answer without additional information.
Cu/Pd/Co/Pd epi layers on Si(111), simply by refraction, the thinner the film - the less refraction.
I think it is due to charging, because if I mount the sample with conducting clutch it is OK, etching is good down to certain thickness
When I mount the sample on sticky tape - etching even does not begin.
The question is now following: probably I should neutralize sample using glow discharge treatment. However I am not familiar with this method. I am using SC7620 Mini Sputter Coater but without Glow Discharge switch option.
ok, now I see the problem more clearly. However, it is strange that the etching is OK down to a certain thickness because you only have conducting layers, except for the Si waver. Hence, the charging should be present or not be present all the time...
You could try, in any case, to make a connection on the side of your sample with conductive paste...
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