Hi I am fabricating mp-TiO2 Perovskite solar cells (Glass/ftO/bl-TiO(50 nm)/mp-TiO/CH3NH3PbI3-XClx/Spiro/Au), but I am getting low current density (10 mA cm-2), Voc is 0.74 V and FF is 0.55. I was previously doing devices but with Al2O3. I am using the exact same procedure but now with mp-TiO2. The max PCE I got for TiO2-mp was 4.8% while for devices fabricated with Al2O3 PCE are around 12% with Jsc of around 20 mA cm-2 . Do you have any suggestion?
Maybe something wrong in the thickness of the TiO2 layer which affect the quality of the formed perovskite film on top? Try to optimize the thickness of the TiO2 layer...it may help. Good luck!
The Voc for TiO2 based device is too low. You can check the morphology of perovskite film on m-TiO2. If there are many pinholes in your perovskite film, it will cause current leakage. Or you can try to do some treatments (e.g., UVO) for the m-TiO2 before you deposit the perovskite film.
Thank you very much, guys. That what I am going to do and see if my results get better. I forgot to mention that these cells were made in a normal lab (not clean room) with a very basic plastic glove-box. It does not complete isolated of Oxygen and humidity is around 25-30%.
Dear Rosinda, I think the resistance of ITO already changed. because the ms-TiO2 needs high-temperature to treat, which usually conducts under general environment. This indicates the ITO will react with oxygen, which changes the carrier concentration of ITO implying the resistance will change.
Recommend: you should use FTO as substrate instead of ITO to prevent the resistance effect.
Writing mistake sorry! I am using fto but thank you very much for the explanation about the difference between the two conductive glass :).
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