I am trying to find a very slow wet etch process for etching away thin Ti layer or residues left on the sidewalls of nanowires deposited from electron beam evaporation?
For slow wet etching you should try a cold treatment, maybe at even at 5 C. If you try to prevent any damage of your structures (unfortunately its composition isn't specified) you can use a selective etchant with higly diluted chemicals, e.g. HF in DI water (1:100) or NH4OH:H2O2:H2O (1:1:50). See for example http://www.cleanroom.byu.edu/wet_etch.phtml.