How to use non parabolic band approximation for the analysis of electrons TRANSITIONS and its areas of device application over parabolic band approximation?
See this book "Nanoscale MOS Transistors: Semi-Classical Transport and Applications"
The energy band structure is the relation between the electron energy and its momentum in the allowed energy intervals or band. This relation is generally non parabolic. However, such E-P relation can be curve fitted at the bottom and to p energy level to obtain the so called effective mass. At the bottom energy level of the conduction band one defines the electron effective mass and at the top of the valence band one defines the hole effective mass.This fitting is only valid for small energy range around these points. This effective mass is used for calculating the mobilities of the drift motion of electrons and holes at weak electric field. In case of strong electric field one has to use the nonparabolic E-P curve. So, one has to use the real E-P relation in case of strong interaction between the electrons and any strong excitation such as in case of breakdown phenomena, high field electron transport. effect.
Best wishes
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