I have a a question regarding surface modification of SiO2 chip. The presumption is that vapors of trimethylsilanol (CH3)3SiOH bond with the original hydroxyl terminated surface of the chip and cause wettability issues, not unlike the manufacturing process of hydrophobic sand (Magic Sand). Could someone please advise how would we go about removing these methyl terminating groups from surface and restore the original hydrophilic hydroxyl group termination?Oxygen plasma did not seem to have an effect on improved wettability. Surface is Si₃N₄, SiO₂, aluminium pads.
Thank you for ideas.