There are quite a few methods that can be used to measure the surface temperature of a Si wafer.
But how can I measure the temperature distribution in z direction. This can be of interest in the case of photo-enabled processing like laser annealing, epitaxial growth etc.
If we can also discuss the response time of different methods, that will be great.
Thanks
Letian
Dear colleague! This is really a very interesting question. I have a "creazy" idea and I do not know if it works. Confocal Raman microscopy is an established tool for determining depth profiles, e. g. of strain. For penetrating several microns you do need a NIR laser. The direct temperature measurement by Raman spectroscopy can be done by determining the Stokes-Antistokes ratio. However, it is not very precise. This means you do need a very sensitive NIR confocal Raman microscope that can also detect the Anti-Stokes range. Wow, a big challenge! :) Wkr, M. Herms.
Dear Dr. Matin Herms,
It's not crazy at all!.
I do have a paper on hand that using the method you described. I came across it the day after I posted this thread. However, the results are not that convincing as you mentioned the penetration depth of the visible laser should not be that deep as described in this report.
https://nanohub.org/groups/quest/File:3d-temp-raman.pdf
But anyway, it's a good suggestion. I am glad that I was looking for shallow temperature distribution, so visible may be working for my case.
But the optical confocal resolution may not be that high, which will be my issue.
Thank you again for the input. Let's see if we have more interesting answers.
Letian
- Badges
- Science topic
- Similar topics
- Engineering
- Materials Engineering
- Annealing