There are two kinds of perfect dislocations in cubic diamond structures, such as SiC, GaAs, etc. Namely, perfect 60˚ dislocations and edge dislocations. 60 ˚ perfect dislocations can dissociate into 30˚ and 90˚ shockley partial dislocations. And, edge dislocations can dissociate into 60˚ shockley partials. However, there are few people give a un-reconstructed structures of these dislocations. I had a hard time to generate these structures.
Are there any one can help give coordinates of these five kinds of dislocations? Thanks a lot!
References are attached.
Dear Cheng Liu
There are many procedures to follow in order:
1. try to put masks and radiate area which you want by TEM
2. try to use annealed procedure in Helium or nitrogen gas at elevated temperature
3. try to use high furnace in air at different Temperature
4. You have to decide the best way to get the best result
I think Fig. 1 is staking Fault in [002] direction.
Determination of electron beam direction (B) from of Bragg's law as the page which I wrote it and attached with this.
I hop I answered your question.
Good luck
Sorry Yevhen
Absolutely no it did not happened before that the diamond it turns to graphite. Also the properties of diamond after enough time of studying it returns again and did not changed. This is advantages of diamond. I mean you can use the diamond sample again and again.
Dear Hamida and Yevhen:
Thank you very much for your help! I appreciate it!
It's great to know there are so many ways to create dislocations in SiC experimentally.Well, I'm sorry that I didn't ask the question accurately. I would like to know how to generate the 30o, 60o, 90o dislocations by adjusting atom coordinates, which people always visualize them with atomEye, Ovito, etc. simulation softwares. Do you have suggestions on that?
Thanks a lot!
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