Hello,
I am trying to etch 2 μm of PECVD SiO2 using a ~4 μm PR mask to create a pattern of 20 * 60 μm. I am using the Oxford ICP-RIE Plasmalab System 100. I have tried multiple recipes, but I have encountered issues such as low selectivity, polymer redeposition, and extremely low etch rates at times. Any suggestions would be greatly appreciated.
Thank you.
Inductively Coupled Plasma (ICP) Reactive Ion Etching (RIE) is a common method for etching silicon dioxide (SiO2), often using fluorine-based gases due to their high reactivity with SiO2. However, the exact recipe can vary based on the specific system and desired etch rate, selectivity, and profile. Below is a starting point for a recipe, but it will likely need to be optimised for your specific situation:
Again, this is just a starting point and will likely need optimisation. Factors to consider during optimisation include the etch rate, selectivity to the mask and underlying layers, etch profile (anisotropy), uniformity, and any physical or chemical damage to the sample.
Please always follow safety procedures when working with plasma etching systems and handling gases. Also, confirm with the facility or equipment manager that your planned recipe is compatible with the system and won't cause any damage or contamination.
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