Dear Shwetha,

welcome,

All you need is to stress the solar cell in forward bias under dark condition and then you interrupt the forward bias by open circuiting the solar cell while observing the voltage variation with time. One turns his attention to the open circuit phase of the open circuit voltage decay with time.

By evaluating the slope of the decay of the Voc with time one can calculate the lifetime Tau,

The relation one can use is:

slope= dVoc/dt= nVt/Tau, where n is the ideality factor Vt is the temperature equivalent voltage kT/q, k is the Boltzmann constant T is the temperature in Kelvin and q is the electronic charge>

For performing the measurements please refer to the link: Article A. Zekry and G. El-Dllal, “ effect of MS contact on the elec...

Best wishes

Dear Prof Zekry,

Thank you for the answer. I will follow as you said.

Dear Shwetha,

Not at all!

You can further use the experimental description used in the given link to measure the minority carrier lifetime of any diode or solar cell:Method Measuring the small signal and switching parameters of diodes

Best wishes.

Best wishes