I have performed UPS analysis of a semiconductor, and obtained the following spectrum. According to literature, I calculated the work function to be -2 eV (taking EF=2.5 eV, hv=11 eV, and cutoff energy=15.5 eV). This seemed to agree with our DOS simulation. However I am unsure whether I took the cutoff energy correctly. As there is another small peak at 16 eV. From the literature I found I have been unable to explain for this additional peak, and I don't think it's the actual cutoff energy. I wonder if this is some measurement error or does this reflect some kind of defect energy state in the material?