Hi, everyone, we gonna to find a suitable material(metal or alloys) or a good contact way, to achieve enough bonding strength and low contact resistance in the junctions and interfaces between different materials?
The diffusion and the new product of the interface reactions sometimes is not easy to control, are there references for understanding and citation?
Sincerely,
Rui
following articles may be useful
http://ieeexplore.ieee.org/document/4684560/?reload=true
http://ac.els-cdn.com/0925838895016562/1-s2.0-0925838895016562-main.pdf?_tid=67cab656-7698-11e7-874d-00000aab0f6b&acdnat=1501578441_17baf4fe2b8d613de090a43cea0c9869
http://ieeexplore.ieee.org/document/4433567/
Hi Rui,
The question is very interesting and still up to date.
Balancing the bond strength between the different materials is associated with many factors. One is the size of the atoms and their crystal lattice. The infiltration of foreign elements results in deformation and internal tensions, which may be positive or negative. If they are positive, they act as seductionists or if they are negative they are acting as translators. One of the approaches is the use of gaps for the release of the sounds. Another non-minor factor is the specific resistance of each material. It has a strong influence when the materials will be used in electrical conductivity. In order to have a balanced state, a small amount of resistance is needed.
Methods for obtaining balanced strengths are quite muddled (applying coatings to vacuum systems) and there is still no ideal
There are other factors that may prove to be important for your research. It depends on what the purpose of the scientific work is and how it will be realized.
Wishing for success
Emil Yankov
Dear Emil Yankov,
Many thanks for your patient answer.
Bonding require the existence of an attractive force acting between atoms, so the atoms,directly decide the type of bonding, i.e., covalent bonding, ionic bonding, metal bonding, van der Waals bonding. (chemical affinity). from Fundamentals of Materials Science.
The crystal lattice will make a difference in their matching applied at elevated temperature, that is a coefficient of thermal expansion, a large CTE is easy to cause stress and crack. (physical affinity)
The contact resistivity of metal-semiconductor contact is related to the barrier height and the doping concentration. From Physics of Semiconductor of Devices.
The difficulty to find this approach is the decoupling of the muti-properties, like the bonding strengths, contact resistance, and the others. This is a common in materials research. Each researchers who find a point or path to balance them will make the materials closer to application.
Sincerely,
Rui
http://www.springer.com/us/book/9783642104992
http://as.wiley.com/WileyCDA/WileyTitle/productCd-0471143235.html
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