"The impact of chlorine doping on the optoelectronic properties of the β-In2S3 thin film elaborated by the spray pyrolysis technique is first studied by Angel Susan Cherian. In2S3 was prepared by mixing In(NO3)3 and thiourea as precursors has very low photosensitivity. Up on addition of an optimal amount of chlorine in In2S3, the photosensitivity and crystallinity increased until reaching the optimal level of Cl concentration. Jayakrishnan et al. claim that through optical absorption studies in β-In2S3 thin films the band gap energy is around 2.66 eV. Wafula et al. quote that the activation energy in Cl doped In2S3 layers was about three times higher than that of parent layer while its pre-exponential constant was six times higher that Cl free In2S3layers. Besides, John et al. reported that the use of a Cl-based precursor produced highly crystalline and photosensitive films of In2S3."
Link: Article Impact of chlorine doping on structural, optical and photoco...
"Interestingly crystalline samples with high photosensitivity were also having higher band gap. This may be due to the incorporation of oxygen in films doped with Cl."
Link: Article Role of chlorine on the opto-electronic properties of β-In 2...
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Best of luck in your research!
Yours sincerely,
M. Sc. Vadym Chibrikov
Department of Microstructure and Mechanics of Biomaterials
Institute of Agrophysics, Polish Academy of Sciences