The optimization of several factors is essential to increase CoFeB-MgO film anisotropy without reducing magnetization strength or magnetostrictive capabilities.

1. Film Thickness and Deposition Conditions

The film thickness needs to stay between 1-2 nm to achieve perpendicular magnetic anisotropy (PMA) without reducing magnetization level.

The deposition rate control enhances crystallinity by producing lower rates during growth so anisotropy strengthens.

The sputtering power and pressure should be optimized to achieve uniform film growth which minimizes defects that harm magnetic properties.

2. Annealing Conditions

The CoFeB-MgO interface can reach improved anisotropy when post-deposition annealed at temperatures between 300 to 400 degrees Celsius under vacuum or controlled atmosphere conditions.

Both uniaxial anisotropy and magnetic field strength serve to enhance anisotropy during annealing through a controlled external magnetic field application.

3. Doping and Interface Engineering

Adding elements Ta, W or Mo to interfaces creates an improved interfacial anisotropy without reducing magnetization performance.

The way boron (B) settles during diffusion and its post-annealing removal procedure determines how perpendicular anisotropy emerges.

4. Strain Engineering & Substrate Effects

A suitable choice of substrate materials which match the crystal lattice like MgO and Si/SiO₂ helps maximize interface effects.

When the stress level during deposition receives proper control this activates magnetoelastic properties to boost anisotropy strength.

5. Interface Quality & Oxidation Control

The development of a high-quality CoFeB-MgO interface requires a well-defined and clean boundary between these materials. Excessive oxidation can degrade anisotropy.

During MgO deposition appropriate management of oxygen flow prevents the layer from becoming excessively oxidized.

Tuning specific parameters enables better anisotropy while preserving both magnetization strength and magnetostrictive properties thus making CoFeB-MgO films applicable for spintronic and memory systems.

Thank you! However, your response presents several hypothetical approaches to achieving enhanced anisotropy in the material. Additionally, it is important to consider the magnetostrictive effect, particularly during annealing, as well as the impact of lattice mismatch if we follow the suggested steps.