22 January 2015 4 3K Report

One of my problems is to fully understand the principle of the space charge limited current model.

- the process of trapping: after the ohmic region, at the point where the concentration of free carriers in the insulating material (in my case GaN with a relativly huge bandgap) matches the concentration of injected carriers, the current transport is limited by trapping, right? How can I understand this process? The double logarithmic scale shows a V^2 slope in this region, so it's obvious that this corresponds with a space charge, which is built up. Do these (I think for small voltages we are talking about shallow traps) traps work like a "cage" which catches these carriers and thus limits the current? But why can I observe a quadratic beahviour then?

- at Vtfl all these traps can be filled. In an energetic point of view, do I understand this right, that the ferminiveau "crosses" the energy-niveau of these traps and thus the traps are (statistically) all filled up and stay filled? So every additional injected carrier is able to "go over" these traps because they are filled? Is that the (or a) reason for the steep increase in current (slope above 2)?

- What kind of impact do the deep traps have?

Thank you

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