In poly-crystalline or crystalline thin films, grains are formed. is there any experimental or theoretical way to calculate activation energy of grains?
If it is a semiconductor, you can use Arrhenius plot for the calculation. Experimentally, you can measure the resistance (charge carrier mobility) of the film vs. temperature. Many publications on this topic.
E.G.
http://aip.scitation.org/doi/10.1063/1.4939289
which activation energy do you mean? for which process?
For a certain process, activation energy is measured by measuring the physical quantity different temperatures (suitable range) then draw between the logarithm of the quantity and the temperature. You can calculate the activation from the slope.
like I=Io exp (-a/KT) => ln(I)=ln(Io) - (a/KT)
ln(Io) is the intercept , a/K is the slope, K here is Boltzman constant.
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