Ga is diffused into a thick slice of silicon at a temperature of 1100°C for three (3)
hours. What is, after that time, the Ga concentration (Ga/cm3) at a depth of:
(a) 1 x 10–4 cm and (b) 3 x 10–4 cm? (A constant Ga source is used at the
surface, Co = 1018/cm3; D1100°C = 7 x 10–13 cm2/s.)
In this question, I wonder c0 is the initial concentration or surface concentration?
Also if it is the initial concentration of Ga in all volume of silicon, how would we calculate the C(x,t)?
And what about the situation in which C0 is the surface concentration in t=0? (I think that in t=0, Cs is infinite)
Hajar Ghanbari
- Somehow, but I have some problems with the proposed answer. The problem is that the answer based on the assumption about the calculation of Q or M ( surface concentration). It assumed a unit length and multiply C0 to this unit length and calculate the answer for Q (M) as surface concentration to be used in formula. However, I wonder, if there is any solution without this assumption and directly calculate Q (M).
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