Please suggest some technique to remove the passivation layer of Boro Phospho silicate glass from the surface of the Silicon PIN Diode?
I will be very much thankful to you.
Carlos Araújo Queiroz
Selective wet etching of a borophophosilicate glass layer with regards to silicon-based substrate may possibly be achieved with: HF / NH4F·HF aq. + CrO3 aq. (9―15 g : 100 cm3 H2O), but it must be remarked that it may be not possible to entirely avoid etching the silicon substrate to some degree. Also possible would be ionized gas etching with CF4:O2 (0.14―0.25 mmHg, 300 W, 300 cm3/min).
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Aditya Chauhan
How thick is your layer. The methods would vary depending upon the thickness and the amount of surface damage acceptable.
Some additional details might help.
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