How can I estimate depletion thickness of silicon from C/V measurement? I can calculate the doping density N, but the depletion thickness is a function of both inbuilt voltage and bias voltage. Any ideas?
Kanad Mallik
Hello Yusuf,
In reverse biased condition, the effective bias on the junction is the sum of the applied voltage and the built-in potential (Va+Vbi). The depletion layer width in the lighter doped region of the junction will be approximately correspond to (Va+Vbi). You can also find Vbi from your C-V experiment. The intercept (obtained by linear extrapolation) on the voltage axis of the 1/C^2 ~ V plot should give you Vbi. So, you can find the depletion width due to the applied voltage.
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