I am going to calculate the complex susceptibility of three-level silicon atom which doped in a silica substrate under electromagnetically induced transparency conditions. I have extracted corresponding relations from “Quantum Optics” by Marlan O.Scully and M.Suhail zubairy (page 227- relations: 7.3.14 and 7.3.15 which I attached here). Base on this reference and considering ωab=305.9 THz (λab=980 nm) and ωac=νµ=193.4 THz (λac=1550 nm), How I can calculate or take into account the other parameters consist of Dipole Momentum, off-diagonal decay rates for ρab and ρac (denoted by γ1 and γ2) and Rabi frequency (Ωµ)?
Best,
Bijan Goudarzi