Dear Muhammad Hamza El-Saba, Thank you so much for the answer. I am trying to simulate the device through Sentaurus. I have already checked the Silvaco examples.
Do you search "hot carrier injection" model from manual of Senaturus Device? I think that There is this model in manual. I also try to find this model from manual. If I found I wrote that here.
I wrote GateCurrent in the physics section and that is capturing the hot carrier injection but the issue is when I am applying negative bias on the gate it is capturing electrons in the nitride layer, which is not possible.
You'd use advanced models of hot carrier injection. They are all explained in one of my articles yete in RG. Generally speaking, the field dependent models, like Shockley ligky electron models are not physically correct, because hot carrier injection repends on the carrier energy - not the local lectric field.Choose energy transport or hydrodynamic model instead of the druft-diffusion model on yoursimulation