What is the benefit of FTIR (spectroscopy) test for semiconductor thin films and can we find out what kind of semiconductor we can test with it?
hai it is basically to know what kind of functional groups and their bonding between individual elements present in the sample .u can characterize semiconducting thin films using FTIR for their optical properities such as transmittance,reflectance.etc.
Hi.. it is easy to identified the functional group which are present in the given sample(semiconductor thin film )by using FTIR FTRaman spectra (by analysing the FTIR or FTRaman spectra) and easy to identified chemical bonding which are present in the given (semiconductror thin films) sample..
To find what type of semiconductor u can go for hot probe test or seebeck analysis
Just curious...do FTIR is useful to understand the bonding of thin film materials. Recently I used FtIR to investigate irradiated nanospheres polystyrene that were let self assembled on silicon substrate. Both electron beam and laser, do changed the polystyrene structure if excess or overexposure of irradiation to these polystyrene nanospheres. Now, what I am puzzle, is the benzene ring of the polystyrene can be affected by laser or electron beam radiation? If the benzene ring in these polystyrene can be manipulated by laser or electron beam, does the hydrogen at the polystyrene chains can also be affected? Any idea?
thank you very much Mr Rao ,Mr.Dasar , Mr. Kumar, Mr. Agam
IN FT-IR characterization we was find out the chemical bonding between the hydrogen and the a-si,with the function of wavelength.
For the Before Annealing plasma deposited a-Si:H thin film which is deposited at 14 W , and substrate temperature is maintained at 300 0C, the most intense mode (TO) shifts from ≈ 460 to ≈ 480 cm-1 . After annealing at 250 oC & 300 oC the same film most the most intense mode (TO) shifts from ≈ 470 cm-1 & 512 cm-1 respectively. The shift towards higher frequencies and narrowing of the TO band in consistent with improved short rang order towards the crystalline structure, which exhibits a TO band of width ≈30 cm-1 at 512 cm-1. The Raman set up used for this present work consists of a (Perkin Elmer-2000, FT-RAMAN),
Thank you very much Dr Kumar but can i find th Energy gap of thin GaAs Films by FTIR and how
Yess if you have record the absorption spectra of this sample than you can find out the energy bang gap using tauc relation.
FT-IR cannot be used for determining band gap. As Dr Kumar mentions you will need absorption spectra for that. FT-IR only tells you the surface properties.
Ya using UV-Visible or IR spectrophotometer u can find the band gap using transmittance or absorption spectra. By FTIR U CANNOT.
Hai Omar,
Plz tell me how we can find energy gap from Raman spectra. Suggest me some idea.
How can use FTIR to get semiconductor thin film transmittance? what kind of substrate should be used?
yes FTIR used for optical porperties characterization, To study the structure, you can used both XRD ant TEM
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