Looking for collaboration
We have synthesized a compound, which is a semiconductor a ambient pressure. By high-pressure structure determination using a diamond anvil cell we have now observed at room temperature a transition to a high-pressure phase with interesting structural features that give us the idea that a metallization of the semiconductor may occur in the transition.
We have the interest to confirm this hypothesis by a measurement of the electrical conductivity in dependence of the pressure. The transition occurs around 45 kbar (4,5 GPa). We don't have the equipment to reach this pressure with simultaneous measurements.
We look for collaboration with a group equipped for such measurements.
Dear Prof. Beck,
We have the set-ups for studying transport properties (conductivity, Hall effect and thermopower) under high pressure, up to 10 GPa. We also study the correlation between transport and carrier related optical properties (FTIR spectroscopy in diamond anvil cell). You can check our papers on the transport properties and semiconductor-metal transitions in III-VI (InSe,GaSe), II-VI (CdTe, ZnTe, ZnO) and V2VI3 (Bi2Se3) semiconductors under high pressure.
Depending on the type of sample (single cristal or polycrystal), far infrared spectroscopy in DAC can be more reliable than conductivity measurements and provide more physical information about the nature of the phase transition.
Sincerely, A. Segura
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