Dear All,
Is it possibility that a mix of quantum dots with a semiconductor material could improve the EQE under UV exposure while actually reducing other parameters such as photosensitivity, Responsivity and Photo current ? What is the reason for such behavioure?
Note: QDs are expected to respond to NIR wavelength, so how is the increase in EQE under UV exposure compared to the device without QD explained in this situation?
note: the QD were purchased and used as recieved with olic acid capping
Best Regards,
Sara
QD which is a nanoscal sized semiconductor. In this size scale the energy gap dramatically increases which increase it's sensetiy to visible and UV light. While th reduction to this size reduces other parameters like conductivity in all photo, electrical and thermal. All other relationship ed parameters will also changes
Dear professor,
Could you explain the physics point of view of this reduction ? Or perhaps refer me to any good literature and reading material that can help me understand and reason such reductions ?
Dear Varun Vohra,
My devices are OFETs with an active layer of polymer blended-TIPS and another batch with the active layer being blended polymer-TIPS:PbS-QD. it is a lateral top contact-bottom gate structure (gate/insulator/activelayer/Source-Drain contacts).
i am testing the device under UV light exposure, and the calculations are mainly dependadnt on the photocurrent= current under exposure - current in dark. since the photocurrent is decreasing with the devices that include QD, it makes sense that the other parameters are decreasing. After re-calculating, i found that even EQE was decreased, which is expected
So i should be asking why the photocurrent is decreasing? shouldn't the addition of a photoactive material (QD) in the polymer-blended TIPS increase the photogeneration upon exposure and lead to higher photocurrent?