A selective-deposition process by CVD ? As for me, it's the new material used for 20nm and beyond ? I know there is some effect (specially U%, wafer edge defect level) to WL deposition caused by shapes of E-chunk, but I'm not sure it's the same to selective depo..
Realizing the selective-deposition is kind of our purpose. As far as I know, the surface of electrostatic chucks is ususally seperated into 2 or 4 pieces, cooling gas outlet is also seen on it. will it form patterned surface charge on samples located on the chuck? Does the surface charge affect the deposition?