Hi all, In many research articles, it's been said that the near-threshold (NT) regime of a standard CMOS FET has exponential characteristics between drain current and Vth similar to sub-threshold (ST) operation (may be in slower rate) as well as the exponential behavior of process variation. But we know that generally, the near-threshold zone is bounded by ST at one end and super-threshold at the other end, leading to something in between (a moderate inversion). My question is do we have an accurate model for NT drain current ? Or still the standard ST Id model is valid for NTC regime ? (Here by referring to NT, I meant, the general situation of having 0.5 vdd for 1.2v standard devices where Vt s pretty closed to 0.5 but below !)
Yes, of course.
There are documents describing this, eg
"MOSFET operation in Weak and Moderate Inversion", R.R. Harrison
EE 5720/University of Utah
Cheers,
Henri
Dear Anuradha
There exist in the literature of the MOS transistors models that can describe with sufficient accuracy the I-V characteristics of the transistor at any inversion level based on physical models. These models are intended for analog circuit design. For more information please see the paper at the Link:https://eva.fing.edu.uy/pluginfile.php/62854/mod_resource/content/1/refs/Modelo_ACM.PDF
wish you sucess
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