Graphene Electronics Vs Silicon Electronics !!
Silicon has a band gap of 1.1 eV but graphene is zero band gap semi metal. Therefore graphene has a very less scope in achieving the goal. Further, Doped graphene layer can have certain band gap which can be used in electronic applications similar enough to those using Silicon.
Graphene show promise as the basis for a host of extremely small and efficient electronic devices. But tailoring graphene through a doping process aims to its success. In case of silicon-based devices, Si is doped by replacing some of the atoms in a silicon crystal with various dopant atoms or molecules. While in case of Graphene, dopants like gold, bismuth, etc. are generally deposited on top of the carbon sheet rather than replacing carbon atoms, which is the main hurdle. Presently, there is need for effectual tailoring of graphene by doping processes for replacing silicon electronics with graphene electronics.
in terms of doping graphene, maybe revisit the whole field (dating back to I think the 1960's) of intercalation of graphite - https://en.wikipedia.org/wiki/Graphite_intercalation_compound
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