I am doing a study on p-type AlGaN and attempted to do current-voltage (IV) as well as Hall effect to measure the electrical properties of a sample. My fellow colleagues made mention of the destructive effect of IV and Hall effect and that I would not be able to do other measurements after that (such as photoluminescence or XRD). Can somebody explain on what effects electrical characterization has on an entire thin film sample such as AlGaN?

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