The preferred shallow (~15 meV) donor impurity for GaN is silicon. Silane as source material is used for in-situ doping during the growth, high n-type doping level can be obtained. Selective doping by silicon implantation has already demonstrated in the litterature [1-4]. However, p-type doping by ion implantation is currently a technological challenge due to GaN sensitivity to high temperature post-implantation annealing.
[1] “Si Implantation and Activation in GaN :Comparison of Two Materials: GaN on Sapphire and GaN on Silicon”
Anne-Elisabeth Bazin, Frédéric Cayrel, Mohamed Lamhamdi, Arnaud Yvon, Jean-Christophe Houdbert, Emmanuel Collard and Daniel Alquier
Materials Science Forum Vol. 711 (2012) pp 213-217
[2] “Study of Two Fluences of Si Ion Implanted Gallium Nitride “
A.E. Bazin, F. Cayrel, M. Lamhamdi, A. Yvon, E. Collard and D. Alquier
HeteroSiC - WASMPE 2011, Tours (France), June 27-30, 2011
[3] “Carrier profiling in Si-implanted Gallium Nitride by Scanning Capacitance Microscopy”
M. Lamhamdi, F. Cayrel, A.E. Bazin, E. Collard and D. Alquier
E-MRS Fall Meeting 2010, Symposium D on Multidimensional electrical and chemical characterization at the nanometer-scale of organic and inorganic semiconductors
[4] “Si implanted reactivation in GaN grown on sapphire using AlN and oxide cap layers”
F. Cayrel, A.E. Bazin, M. Lamhamdi, Y. Benchanaa, O. Menard, A. Yvon, E. Collard and D. Alquier
Nuclear Instruments and Methods in Physics Research B 272 (2012) 137–140
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