I can also provide you 3 sets of Ib(Vbe) diodes measurements done on two SiGe bipolar transistors C1 and C2 (S. Chen, D. Prêle et al, Radiation Tolerance of RHBD techniques on a SiGe BiCMOS 350 nm ASIC technology, RADECS 2019). One has been irradiated then measured again. The low injection effect is here clearly visible :