Dear Balaji Murugan,

We did review this method recently. Please read our review article entitled “A review of diode and solar cell equivalent circuit model lumped parameter extraction procedures”. It is available at:

https://www.researchgate.net/publication/261503757_A_review_of_diode_and_solar_cell_equivalent_circuit_model_lumped_parameter_extraction_procedures

Best regards,

Adelmo

Article A review of diode and solar cell equivalent circuit model lu...

Dear Balaji,

The attached recent publication might be helpful in clarifying and explaining Norde method for diode calculations :

Sensors 2015, 15, 4810-4822; doi:10.3390/s150304810

sensors

ISSN 1424-8220

www.mdpi.com/journal/sensors

Article

Calculation of the Electronic Parameters of an Al/DNA/p-Si

Schottky Barrier Diode Influenced by Alpha Radiation

Hassan Maktuff Jaber Al-Ta’ii 1,2,*, Yusoff Mohd Amin 1 and Vengadesh Periasamy 

Abstract: Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier

height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.

Hoping this will be helpful,

Rafik

Dear Balaji,

The attached recent publication might be helpful in clarifying and explaining Norde method for diode calculations :

Sensors 2015, 15, 4810-4822; doi:10.3390/s150304810

sensors

ISSN 1424-8220

www.mdpi.com/journal/sensors

Article

Calculation of the Electronic Parameters of an Al/DNA/p-Si

Schottky Barrier Diode Influenced by Alpha Radiation

Hassan Maktuff Jaber Al-Ta’ii 1,2,*, Yusoff Mohd Amin 1 and Vengadesh Periasamy 

Abstract: Many types of materials such as inorganic semiconductors have been employed as detectors for nuclear radiation, the importance of which has increased significantly due to recent nuclear catastrophes. Despite the many advantages of this type of materials, the ability to measure direct cellular or biological responses to radiation might improve detector sensitivity. In this context, semiconducting organic materials such as deoxyribonucleic acid or DNA have been studied in recent years. This was established by studying the varying electronic properties of DNA-metal or semiconductor junctions when exposed to radiation. In this work, we investigated the electronics of aluminium (Al)/DNA/silicon (Si) rectifying junctions using their current-voltage (I-V) characteristics when exposed to alpha radiation. Diode parameters such as ideality factor, barrier height and series resistance were determined for different irradiation times. The observed results show significant changes with exposure time or total dosage received. An increased deviation from ideal diode conditions (7.2 to 18.0) was observed when they were bombarded with alpha particles for up to 40 min. Using the conventional technique, barrier

height values were observed to generally increase after 2, 6, 10, 20 and 30 min of radiation. The same trend was seen in the values of the series resistance (0.5889–1.423 Ω for 2–8 min). These changes in the electronic properties of the DNA/Si junctions could therefore be utilized in the construction of sensitive alpha particle detectors.

Hoping this will be helpful,

Rafik