I recently found out that TCAD(Sentaurus) changes the E_A of Boron as a function of doping.

EA=EA0 - (3.1*10-8*NA1/3)

The reference given in the Sentaurus Device Manual was

  • P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties, Berlin: Springer, 2nd ed., 1999.
  • K. F. Brennan, The Physics of Semiconductors: With applications to optoelectronic devices, Cambridge: Cambridge University Press, 1999.
  • However I was unable to clearly point out where these equations were and their explanation.

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