The reaction between Si and C at high temperature resulting in the formation of SiC is certainly possible. C60 (source of carbon) can react with the Si deposited on it at high temperature. The temperature at which C60 will react with Si is hard to predict but the temperature of 500C appears too low. Temperatures of the order of a few thousand degrees may be required. Reaction between Si (powder) with amorphous C has been examined in detail [S. K. Bhaumik, C. Divakar, S. U. Devi, and A. K. Singh, Synthesis and sintering of SiC under high pressure and high temperature, J. Mater. Res. 14, 906-911 (1999)].
The sintered compacts of SiC may be used as substrate.