Dear Maurya,

welcome,

The ideal scavenger of holes is an ohmic contact. Ohmic contact can be achieved by heavily doped p-type material contacted by aluminum metal.It can also achieved by very damaged silicon surface acting as a high recombination surface.

Best wishes

Hi,

It depends on the device architecture (p-i-n or n-i-p) and band alignment of solar cell device. If in case you use heavily doped p-Si, so first you are compromising with the transparency. Second it has to have a suitable band alignment with your hole transporting layer (HTL). Third it should have a sharp interface with HTL so that it can fully extract the photo generated positive charge carriers to have good Fill Factor, Voc and Jsc.