I have incorporated a single impurity in 1*5*1 supercell of GaN. For 4 different atoms from group IV I have found the same lattice constant. Is it normal?
Dear Abir Hassan,
please, see the following article:
https://link.springer.com/article/10.1557/S1092578300001447
Hi Abir
I think the following papers can help you a lot.
1- Michael A. Reshchikov, Chapter Nine - Point Defects in GaN, Editor(s): Lucia Romano, Vittorio Privitera, Chennupati Jagadish, Semiconductors and Semimetals, Elsevier, Volume 91, 2015, Pages 315-367,
https://doi.org/10.1016/bs.semsem.2014.11.003.
2- Reshchikov, M.A., Usikov, A., Helava, H. et al. Evaluation of the concentration of point defects in GaN. Sci Rep 7, 9297 (2017). https://doi.org/10.1038/s41598-017-08570-1
Have a good day.
Dear Abir,
Generally, no! But in your particular case of Si dopant (diamond structure) and GaN host, which is usually hexagonal wurtzite with lattice constant 1/ √2 of zincblende lattice constant, it is Ok. Note that a hexagonal wurtzite type, has nearly the same tetrahedral nearest-neighbor atomic coordination as cubic zincblende (ZB) and diamond structures.
- Badges
- Science topic
- Similar topics
- Physical Sciences
- Atomic, Molecular and Optical Physics
- Atoms