we have SOI wafer having specifications of 1 micron BOX , 10 micron device layer and 400 micron handled wafer . In my fabrication process i need oxide layer on device layer. so can i perform thermal oxidation on SOI wafer and whether oxidation will create any damage to BOX layer in SOI wafer?
Dear Bonam,
Yes you can oxidize your SOI. There some recommended methods of oxide formation for silicon. The most straight forward methods is the direct thermal oxidation using oxidizing agent such as water vapor and oxygen or a mixture of two. The oxidation temperature is about 90-1100 degree centigrade. The rate of oxidation using water vapor is higher than that of oxygen. The oxide quality of oxygen is better than that of the water vapor.
Oxidation is associated with interface defect formation, where the interface sates for O2 is much smaller than H2O.
One can also deposit SiO2 using low pressure chemical deposition, which is sued normally for wafer passivation.
There are standard books such Sze, VLSI technology.
Best wishes
Yes, you can oxidize SOI and it is expected to affect the box. Read more about silicon oxidation in Plummer's book:
https://books.google.ca/books?id=U97p5phY-h4C&dq=silicon+vlsi+technology+plummer+pdf+free+download&hl=en&sa=X&ved=0ahUKEwjE0tunoZfaAhUP3YMKHVWEAfAQ6AEIJDAA
yes you can perform thermal oxidation (SiO2) whithout affect the box layer (SiO2), because the diffusion of the O2 is limited at max 2 µm. However, when you perform thermal oxidation, you will get oxide on both layer ( on the device layer and the handle layer)