Hi, I am also a green hand in the graphene field and still learning. But by chance, I read the paper about the graphene doping including Ga doping, you can refer to the paper ( https://doi.org/10.1002/cphc.201402608)
Doping usually involves few parts per million of an atomic species in a host material, so in this case I would say that what you propose is no different than doping Ga with Carbon... which by the way is very common in GaN electronics.
I would expect a p-type semiconductor, if Ga substitutes carbon. It is similiarly to boron doping in silicon. Nevertheless, there are a lot of questions - what is the ionization energy. If it is a deep acceptor, than it only neutralizes donors. If the atom fits an interstitial place, than the electrical behaviour can be different.