Hello everyone,

I would like to know about the model file which can be used in sentaurus environment to extract the I-V characteristics of Resistive Random Access Memory (RRAM).

I went through the sdevice manual where I could see only three models named drift diffusion model, thermodynamics and heterodynamics model which are useful for MOSFET devices and I believe I ll need some other model for RRAM device. So can anyone suggest me about the model file or how to get the information about the model files. Looking forward to the replies.

Best Regards, Barsha