Study of hyperfine interaction between electron and nuclear spin systems often give useful information about the electronic magnetism. Recently hyperfine interaction has been used for quantum computing. Can anyone explain me how this is done?
Hyperfine interaction is a typical example of a topic in physics, that, due to
technological advances, experiences a revival. Originally, hyperfine interaction
was studied in atomic physics. In atoms, the interaction between the magnetic
moments of the electrons and the nucleus leads to the hyperfine structure. The
name hyperfine is historically due to the fact that the energy level splittings
in atoms due to spin-orbit interaction were discovered first, and referred to
as the atomic fine structure. The further splitting of these levels was then
named hyperfine structure and the interaction that gives rise to it hyperfine
interaction.
The following papers are the most cited papers within this topic, copies of two of them are attached.
1- Nature 393, 133-137 (14 May 1998) | doi:10.1038/30156; Received 10 November 1997; Accepted 24 February 1998 "A silicon-based nuclear spin quantum computer"
Abstract: Quantum computers promise to exceed the computational efficiency of ordinary classical machines because quantum algorithms allow the execution of certain tasks in fewer steps. But practical implementation of these machines poses a formidable challenge. Here I present a scheme for implementing a quantum-mechanical computer. Information is encoded onto the nuclear spins of donor atoms in doped silicon electronic devices. Logical operations on individual spins are performed using externally applied electric fields, and spin measurements are made using currents of spin-polarized electrons. The realization of such a computer is dependent on future refinements of conventional silicon electronics.
2- SEPTEMBER 2005 VOL 309 SCIENCE; "Coherent Manipulation of
Coupled Electron Spins in Semiconductor Quantum Dots"
Paper attached.
3-Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Hetero-structures. Paper attached.