Is it possible to deposit graphene on Ni/Cu coated silicon substrate and remove the sandwiched metal to get graphene , directly on semiconductor substrate?
I know it is possible to get graphene directly on silicon by mechanical exfoliation of graphite previously placed on Si(111)7x7 surface. See O. Ochedowski et al., Nanotechnology 23, 405708 (2012).
If I understand your question correctly, you want to deposit graphene directly on Si. The metals you mentioned are used as catalysts for graphene growth. Based on our experience, Si reacts readily with general catalysts used for graphene growth, such as Ni. Cu does not reacts with Si. But it is very challenging to remove sandwiched Ni/Cu without intact graphene.
For a full surface coverage growth of graphene, I would recommend using thermal release tapes or other similar techniques to transfer CVD graphene directly onto Si substrates.
For graphene patterns, I would recommend using laser directing writing methods.
You can grow graphene directly on Si substrate without using any catalysts.. see this paper: http://dx.doi.org/10.1063/1.3675636; If I can remember correctly there is another paper like this either in Science or Nature group.. can't recall right now.
But if you want to use catalysts like Ni then yes it can be removed pretty easily.. by simple mechanical delamination.. see this doi:10.1038/srep05049
Have a look on following discussion
https://www.researchgate.net/post/Could_graphene_be_prepared_directly_on_Silicon
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