I want to grow ohmic contact layer directly on GaN, instead of the TLM model engraved on the lithography and then grow the metal layer. Is there any way to measure the contact resistivity after all the growth?
Try to make use of circular transfer length method (CTLM); you will find several papers dealing with this topic. The main benefit of this method is that it can be applied to contact resistance evaluation WITHOUT the need to etch the GaN layer.