Reviewing some research, I have found that most of the high-fill factor solar cells (FF > 60%) usually present very low series resistance (Rs) concerning the shunt (Rsh) ones. In this context, I would like to know what are the typical absolute values for these parameters in popular and high-efficiency solar cells like those based on Silicon, CIGS, Organic, Dyes, Perovskite, etc. Any reference or comment is welcome.
The different solar cell configurations you listed are very different from one another. The desired material parameters are also quite diverse among the groups you listed. For example, silicon's performance is directly proportional to the lack of defects present in the material while perovskites are very defect tolerant. Therefore, a pretty broad range of performance parameters can be seen in the literature for Jsc, Voc, FF, Rs, and Rsh. I would suggest studying the information available on this website to see how Rs and Rsh together can affect device performance, and also surveying the various literature available.
Article A Printable Organic Cathode Interlayer Enables over 13% Effi...
https://www.pveducation.org/pvcdrom/solar-cell-operation/impact-of-both-series-and-shunt-resistance
Simon Roa Daniel Powell It is always true that Rsh>Rs for solar cell application. Otherwise, you will not be able to get the I-V characteristics of the solar cell. For an ideal solar cell, Rsh (shunt resistance) is infinite and Rs (series resistance) is zero.
And Daniel Powell , please look at the reference also which are given by you in your comment. In that also Rsh is greater than Rs. Please check the unit specified of Rs and Rsh in your reference.
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