I've read about nanotechnology solutions such as Carbon Nanotubes Field Effect Transistors (CNTFET) and also Single Electron Transistor (SET) which are considered as the future of electronic devices. I'm wondering which of them is more promising. Also what is the best method to overcome the wiring problem?
Thank you in advance for any help you can provide.
See this ..
this may be helpful
http://www.ijrte.org/attachments/File/v2i5/E0890112513.pdf
Two of the most challenging issue in CNT transistor is:1. Naturally, single wall CNTs grow with 2/3 semiconductive and 1/3 metallic with respect to their chirality with any methods, so they need a serious purification process like ultracentrifugation to have well defined semiconductive materials including radius purification for bandgap selection, or any innovative selective growing method. 2. Like most of the carbon allotropes such as diamond, graphene, and etc, n-type CNT is not easily availble, resulting difficulty in CMOS architecture, which n-channel and p-channel FET are cointegrated. Same in diamond and graphene materials.
By the way, the SET using Coulomb blockade are challenged to overcome current transistors by ultra low power operation because a few electron movement in the transistor action and ultra low dimension ~10 nm.
Promising?-Both of them are promising and excitingly challenged in the scientific society.
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