I am currently studying Siesta (specifically Transiesta) to investigate electronic transport in materials. However, I am confused about the assumptions and applicability of the NEGF method and this software.
Please correct me if I have any misconceptions, as I am not a student majoring in physics. Thank you.
1) the NEGF implementation in transiesta assumes ballistic transport since other effects are simply not added to the calculation, such as inelastic effects (phonon interactions).
2) I say wrong because physically you can't (at least my imagination) create a pristine device with a pristine electrode that has a lifted potential without changing the electronic structure. Hence my relatively harsh words on this. And when you increase the length, you simply decrease the electric field between the two ends, which are still physically the same.
Thank you for your reply! I also read your response on the Matter Modeling platform. Here's what I understand:
Is this still a misunderstanding? Looking forward to your reply!
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