Our bio-reactor's mixer was malfunctioning and after inspection the company told us that the IGBT module (fujielectric 2MI50F-050) is broken and should be replaced. since it is an old part and the manufacturer is no longer producing it, it is a rare part to find on the market. The company which sold us the reactor suggests that the intended part (IGBT module-fujielectric 2MI50F-050) cannot be replaced with any other IGBT modules available on the market and recommends replacing the whole automation unit with a new one which will put some extra pressure on the research team. Is this true that my IGBT part cannot be replaced with any other part?
Hello Christopher,
i just put 2MI50F-050 into google and found a lot of places to buy it. You should check yourself.
Peter
of course dear Peter but you should know that none of those are reachable from Iran
there are some commercial companies Iran with the ability to provide these parts but price offered by them is almost hilarious.
Fuji electronics discontinued production of the mentioned part a few years ago so I cannot provide required documentations needed for institute. It is hard to convince institute to buy from domestic individuals I do not think I'll have the privilege to make international purchases. That's the main reason I'm asking for an alternative for this part.
thanks for your concern.
The part you listed is a N-Channel MOS-FET Module, not an IGBT. It should be possible to replace it with other modules. You need to make sure that the replacement has the same or higher source-drain voltage (500V), the same or higher current rating (50A), the same gate voltage thershold (3V), and the same or lower source-drain on resistance (0.11Ohm). The module is also a dual device module which could easily be replaces by two single devices if you are willing to make some minor wiring changes. You should look at the datasheet and compare your potential replacements. One thing that is important for MOS-FETs is proper heat sinking. Most MOS-FETs cannot operate at both the rated voltage and the rated current at the same time and will have a safe operating curve. That is also important. That curve assumes proper heat sinking. IXYS makes many modules that could be used as replacements as well as Microsemi. You'll have to search your local sources for modules with similar ratings.
Dear Ron
thank you for your accurate response. I checked it with one of my colleagues and as it turns out this particular item has two modules and it appears that only one of them was connected to the circuit. I think it should be possible to rewire the circuit in the same way that the other module used to be. Please tell me what do you think about this idea.
Regards,
Chris
Sure, switching terminals should work. If your circuit is currently wired to S1, D1 and G1, you can just move the terminal connections to S2, D2 and G2. I would tend to believe that the module was intended to be used with both devices in parallel. It's pretty rare for an engineer to specify a part that is significantly more expensive just to have a spare part built in. This could be the reason that the other half failed. Good luck with your repair.
Can you please enlighten me on this:
"This could be the reason that the other half failed"
you mean if the company used a single module MOS-FET the fermentor's performance would have been any different? and please explain employing a single module of a 2-module MOS-FET can lead to it's failure.
When designing a product, it is usually considered a poor design practice to use a component which is more expensive than what is required for the specific application. This makes it quite rare to see a component in a device where it is not needed. What I'm suggesting is that the MOSFET module in your device was intended to be used with both sides wired in parallel to increase the current capabilities or possibly in series to decrease the operating voltage of each side. By distributing the power dissipation between two devices, you improve the operating range of the machine. For instance, when you are running a motor under a heavy load, you greatly increase the current with the same applied voltage (minus some minor line losses) and this pushes the switching devices closer to the limits of their safe operating range. If you push too hard, the junction temperature exceeds it's limits and your device fails. Running a single side of a dual MOSFET module will not cause the device to fail as long as that side has sufficient power handling capabilities.
There is one more thing to consider here for making your MOSFET fail. The gate drive voltage. You need to make sure that the gate drive voltage is adequate to push the MOSFET into saturation. If your gate drive voltage is low, the RDS(ON) may be high enough to cause excessive power dissipation in the MOSFET. This will cause the junction to over heat and fail.
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