I am using E beam lithography for patterning which utilizes PMMA as the mask. I have a sacrificial layer coated with a thin SiN film, on top of which I need to pattern. Problem is when I try to Strip PMMA using Acetone or 1165, the sacrificial layer (i.e., AZ1518 photoresist or LOR ) is attacked through some pin holes or blisters. Is there any suitable organic that might be useful, so that when I would try stripping PMMA the sacrificial layer would not get affected?
If you bake the LOR above 200-250C, it might survive a lift-off with acetone. Other options would be to use a solvent that readily dissolves PMMA but is less aggressive than acetone such as anisole, chlorobenzene, PGMEA, or even 100% MIBK if given a sufficiently long time.
Nikhil Tiwale Thanks...... I tried LOR with high temperature but problem is stripping off Ebeam resist (i.e., PMMA) takes much longer than photoresists. However, I have discovered high temperature baked (~350 deg Celcius) polyimide can withstand 80 deg hot 1165 or NMP, as its already highly crosslinked.
- Badges
- Science topic
- Similar topics
- Chemistry, Organic
- Organic